, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 t2700 series high voltage, 6-a silicon triacs for power-control and power-switching applications features: 800v. 725 dag. c tj operating high dv/dt and d!/dt capability low switching losses high pulse current capability low forward and reverse leakage sipos oxide glass multilayer passivation system advanced unisurlace construction precise ion implanted diffusion source terminal designations jedec to-21.jaa maximum ratings, absolute-maximum values: "ohm lnbms,(t0=100?c) itbm (for 1 full cycle) 60 hz di/dt it (at 1.2510 10 rns) lour" pom (for 1 ps max.) pgT2700M 600 t2700n 800 ?for either polarity of main terminal 2 voltage (vmi!) with reference to main terminal 1. ?for either polarity of gate voltage (vo) with reference to main terminal 1. *for temperature measurement reference point, see dimensional outline, . 6- .100. .100- . 50- - 4. . 16- .0.2- . -6510150. . -65 to 125. -225- v a a a//js a's a w w c "c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
t2700 series electrical characteristics at maximum ratings and at indicated case temperature (tc) unless otherwise specified characteristic peak off-state current:" gate open, t, = 125c, vorou = max. rated value maximum on-state voltage:' for it ? 30a (peak) t0 = 25c dc holding current:* gate open, initial principal current = iso ma (dc). v0 = 12v: tc = 25c critical rate-of-rise of commutation voltage:" for vd = vdhou. !tmm31 - 6 a, commutating di/dt - 3.2 a/ms. and gate unenergized attc = -i-100c critical rate of rise of off-state voltage:* for vd = vdnom, exponential voltage rise, and gate open attc = 125c t2500b t2500d . .. t2500m t2500n dc gate-trigger currenti't for v0 = 12 volts (dc), rl ? 30 fl, tc = +25 c, and specified triggering mode: iii" mode: v)jm negative, vg negative , . ...,,.,. l~ mode: vmtj positive vg negative im+ mode: v^^-j negative, vq positive for other case temperatures dc gate-trigger voltage:* t for vd = 1 2 v(dc), rl = 30 fl tc = 25c for vd = vdtom, rl = 125 o, tc ^ 12s"c gate-controlled turn-on time: (delay tims t rise time) for vd - v,*?. la = 160 ma, tr = 0.1 us, it = 10 a (peak) tc = 25c (see fig 15) thermal resistance: junction-to-case (steady-state) junction-to-case (transient) symbol idrom vtm iho dv/dt dv/dt igt vot v rua limits for all types unless otherwise specified mln. ? - 3 30 20 15 10 sei 0.2 i typ. 0.1 1.8 15 see fig. & 10 150 100 70 50 15 20 25 25 figs. 7 & 1 see fig. 9 2.2 ee fig. 10 max. 4 2.25 30 - 25 30 40 40 8 2.2 4 units ma v ma v///s v///s ma v /is "c/w 'for either polarity of main terminal 2 voltage (v,,t2) with reference to main terminal 1. tfor either polarity of gate voltage (vq) with reference to main terminal 1.
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